田康凯 讲师
所在系所：微纳电子学系
研究方向：宽禁带半导体器件芯片设计与仿真技术
联系方式：[email protected]
田康凯博士、青百B层次人才，博士毕业于河北工业大学；主要从事宽禁带半导体分立器件、芯片设计与TCAD仿真技术的研究。已发表科研论文70余篇，授权/受理专利十余项，主持横向课题1项，Optics Express等期刊审稿人。
代表性科研项目
1. 9xx nm高功率激光器芯片设计,横向课题,10万，2024
代表性科研成果
1. Kangkai Tian, Jingyu Tang, Chunshuang Chu, Fuping Huang, Yonghui Zhang, Xiaowei Sun, and Zi-Hui Zhang, Enhanced Static and Dynamic Performance for GaN-Based VCSELs with ITO/p-GaN Resistive Current Injection Structure，IEEE Journal of Quantum Electronics, DOI：10.1109/JQE.2025.3574120, 2025.（SCI, IF2.2）
2. Kangkai Tian, Zhengwang Pei, Silu Feng, Chunshuang Chu, Fuping Huang, Yonghui Zhang, Xiaowei Sun, and Zi-Hui Zhang, Physical models and numerical modeling for 280 nm AlGaN-based emission-and-detection dual functional integrated devices by managing hole transport and recombination，Optics Express 33(5): 10609-10620, 2025.（SCI, IF3.2）
3. Deyi Zhai, Kangkai Tian, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, and Zi-Hui Zhang, Impact of carrier injection and recombination on the −3 dB bandwidth for GaN-based VCSELs，Optics Letters 50(11):3720-3723, 2025. (SCI, IF3.1, Top2）
4. Kangkai Tian, Yao Jiang, Wenjie Li, Linhao Wang, Chunshuang Chu, Yonghui Zhang, Xiaowei Sun, and Zi-Hui Zhang, Size-dependent competitive effect between surface recombination and self-heat on efficiency droop for 250 nm AlGaN-based DUV LEDs，Optics Letters 49(22): 6369-6372, 2024. (SCI, IF3.1, Top2）
5. Fuping Huang, Kangkai Tian, Chunshuang Chu, Yonghui Zhang, Shuting Cai, Xiaowei Sun, and Zi-Hui Zhang,On the physical models for 7.2 kV AlGaN/GaN SBDs with dual gates: polarization gate and common-connected grooved-gate/anode architecture to suppress leakage current and reduce dynamic resistance, Physica Scripta, DOI: 10.1088/1402-4896/adc639, 2025. (SCI, IF2.6）
6. C. Chu, K. Tian and Zhang Zi-Hui, Polarization self-screened multiple quantum wells for deep ultraviolet light-emitting diodes to enhance the optical power, IEEE Photonics Journal, 2021, 13(5): 8200305. (SCI, IF2.1）
7. K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Z. Zhang and T. Wei, On the polarization self-screening effect in multiple quantum wells for nitride based near ultraviolet light emitting diodes, Chin. Opt. Lett. Lett., 17 (12), 122301 (2019). (SCI, IF3.3）
8. K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Q. Sun, Z. -H. Zhang*, T. Wei, Interplay between various active regions and the interband transition for AlGaN based deep ultraviolet light emitting diodes to enable a reduced TM polarized emission, J. Appl. Phys. 126, 245701 (2019). (SCI, IF2.7）
9. Z. -H. Zhang*, K. Tian, C. Chu, M. Fang, Y. Zhang, W. Bi and H. –C. Kuo*, Establishment of the relationship between the electron energy and the electron for AlGaN based ultraviolet light-emitting diodes, Opt. Express 26(14), 17922 (2018). (SCI, IF3.2）
10. K. Tian, Q. Chen, C. Chu, M. Fang, L. Li, Y. Zhang, W. Bi, C. Chen, Z. –H. Zhang* and J. Dai*, Investigations on AlGaN-based deep ultraviolet light-emitting diodes with Si-doped quantum barriers of different doping concentrations, Phys. Status Solidi RRL 12(1), 1700346 (2017). (SCI, IF2.5）
11. K. Tian, C. Chu, H. Shao, J. Che, J. Kuo, M. Fang, Y. Zhang, W. Bi and Z. –H. Zhang*, On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes, Superlattice Microst. 122, 280-285 (2018). (SCI, IF3,3）
