王成财 讲师
联系方式：[email protected]
通讯地址：漫蛙漫画
大学城校区理学馆
所属团队：宽禁带半导体器件与集成团队
简介：
王成财，博士、讲师、青百B层次人才，博士毕业于南方科技大学，主要致力于第三代宽禁带半导体氮化镓材料（GaN）的电力电子器件的研究，在氮化镓电力电子器件的器件设计，微纳加工工艺、表征测试、器件物理及可靠性分析等方面进行相关研究。
研究方向：
1.宽禁带功率半导体器件
2.半导体器件物理
3.可靠性表征，失效分析
教育经历：
南方科技大学 物理学 博士
中山大学 光学工程 硕士
工作经历：
漫蛙漫画
漫蛙漫画
讲师
香港理工大学研究助理
华为科技有限公司工程师
主要荣誉：
南方科技大学优秀毕业生
EDTM最佳论文奖
科研成果：
1.C. Wang,et al, "E-Modep-nJunction/AlGaN/GaN (PNJ) HEMTs,"IEEE Electron Device Letters, 2020.（ESI高被引）
2.C. Wang,et al, "Normally-off HEMT-based Bipolar p-FET with Enhanced Conduction Capability,"IEEE Transactions on Electron Device,2025.
3.C. Wang,et al, "Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique,"Applied Physics Express,2024.（Power electronics world报道）
4.C. Wanget al., " GIT-Based Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform,"2025 35th Electron Devices Technology and Manufacturing Conference (EDTM’2025), Hong Kong,2025.（2025年最佳论文奖）
5.C. Wanget al, "E-modep-nJunction/AlGaN/GaN HEMTs with Enhanced Gate Reliability,"2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20),Vienna, Austria, 2020.
6.C. Wanget al, “Impacts ofn-GaN Doping Concentration on Gate Reliability ofp-nJunction/AlGaN/GaN HEMTs,"2023 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’23), Hongkong, 2023.
7.X. Liang,C. Wang,et al, "Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors,"Semiconductor Science & Technology,2017. (共同一作)
8. M. Hua,C. Wang,et al, "Gate Current Transport in Enhancement-modep-nJunction/AlGaN/GaN (PNJ) HEMT," inIEEE Electron Device Letters, 2021.
9.M. Hua, J. Chen,C. Wang,et al, "E-modep-FET-bridge HEMT for HigherVTHand Enhanced Stability,", in2020 IEEE International Electron Devices Meeting (IEDM), 2020.
10.J. Tang, Z. Jiang,C. Wang,et al, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform", in2023 IEEE International Electron Devices Meeting (IEDM), 2023.
11.X. Zhao, P. Song,C. Wang, et al, "Engineering covalently bonded 2D layered materials by self-intercalation,"Nature,2020.
